Power crisis has hit globally and power management is now become essential. Leading high-speed memory architectures’ designer Rambus recently achieved a new breakthrough level of power efficiency with its latest silicon test vehicle developed via its Mobile Memory Initiative (MMI).
The latest silicon-validated results reveal that by using MMI innovations, a high-bandwidth mobile memory controller, power efficiency of 2.2mW/Gbps can be achieved. The company claims that it is nearly one third improvement over the previous MMI silicon and extensively better than the estimated 10mW/Gbps of an LPDDR2 400 memory controller.
“The performance demands of next-generation mobile devices are vastly outstripping the pace of battery technology improvements. With the innovations developed through our Mobile Memory Initiative, we can deliver advanced applications and maintain long battery life through our breakthroughs in both bandwidth performance and power efficiency,” stated Martin Scott, senior vice president of Research and Technology Development at Rambus.
The MMI aims to achieve high bandwidth at low power, enabling advanced applications in smartphones, netbooks, portable gaming and other portable media products. A memory system that employs MMI innovations offers more than 17GB/s of memory bandwidth from a single mobile DRAM device.
Rambus’ MMI incorporates significant innovations based on its signaling and memory architecture expertise, including Very Low-Swing Differential Signaling, FlexClocking Architecture, and Advanced Power State Management. Further, FlexPhase and Microthreading technologies enhance the power efficiencies of mobile platforms.