The demand for exceptional image quality and video with lower pixel size has triggered the latest technology innovation curve in CMOS imagers. Extending its contribution, Samsung has now unveiled its new S5K4E5 and S5K2N1, the 1.4 micron CMOS imagers which include backside illuminated pixel technology.
Capable of functioning easily in low-light conditions, each imager is advanced for specific apps like smartphones for the S5K4E5 and digital still cameras and video cameras for the S5K2N1.
“The demand for higher quality images and video with ever shrinking pixel size has pushed the new technology innovation curve in CMOS imagers,” commented Dojun Rhee, vice president of Marketing, System LSI Division, Samsung Electronics. “As such, CMOS image technology has become even more competitive in digital camera and video products that have been traditionally dominated by CCD technology. A small pixel size combined with best-in-class sensitivity under low light for still and video capture makes Samsung’s newest imagers ideal for traditional handheld cameras as well as smartphones.”
The backside illumination accumulates photons from the backside of the pixel. The reversed structure moves the photodiode to the top maximizing photoelectric effectiveness as the light is not spread through the metal wiring and dielectric layers which cause loss of photons. The BSI technology tackles the low light sensitivity issue common to CMOS image sensors as the pixel size lessens.
The company flaunts its BSI imagers which show around 30 percent enhancement in low light sensitivity as compared to conventional front side illumination imagers of the same pixel size. Samsung effectively managed crosstalk which enhanced the color, electrical and optical performance. The S5K4E5 is a quarter-inch optical format 1.4 micron 5MP CMOS image sensor and is developed to offer full support to resolution real-time video.
Besides delivering 30 frames per second full resolution frame rates, the offering helps users capture the frame immediately as the users hits the shutter button, thereby lowering shot to shot lag time. The wider chief ray angle lowers the height of the imager package. This enables the company to come up with sleek and highly portable smartphones with demanding z-height requirements.
The S5K2N1, which is a 1/2.33 inch optical format 1.4 micron 14.6MP imager, delivers 30fps capability at full resolution. Further, it enhances Samsung’s low-power 90 nanometer logic process technology. The solution enables the company to put forth a dedicated thermal plastic lead ceramic carrier package in order to seamlessly dissipate the heat generated by the high performance device. In addition, these imagers also help owners capture full HD resolution video images at 60fps.
Samples of the 5 megapixel S5K4E5 are presently available and mass production is anticipated to begin from the fourth quarter. The samples of the 14.6MP S5K2N1 are expected to commence from the fourth quarter onwards, while the production is scheduled in the first quarter of 2011.